IBM and Samsung achieve breakthrough on flash killer for wearables, mobile devices
IBM and development partner Samsung announced they've developed a process to manufacture a type of non-volatile RAM that is up to 100,000 times faster than NAND flash and never wears out.
The two companies collaborated to develop next-generation magnetoresistive RAM (MRAM) using spin-transfer torque (STT) technology, which would lead to low-capacity memory chips for Internet of Things sensors, wearables and mobile devices that currently use NAND flash to store data.
IBM and Samsung published a paper in the journal ScienceDirect outlining how they scaled STT MRAM down to 11 nanometers for the first time by using 10 nanosecond pulses and just 7.5 microamperes — "a significant achievement."
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