Tokyo, Japan (SPX) Jun 27, 2024
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A minor adjustment can lead to significant advancements, as demonstrated by researchers at Pohang University of Science and Technology (POSTECH). The team developed a material known as "spin-orbit torque (SOT)," gaining attention in the field of next-generation DRAM memory.
Led by Professor Daesu Lee and PhD candidate Yongjoo Jo from the Department of Physics, alongside Professor Si-Young