Electrostatic doping has been widely used in low-dimensional materials, including carbon nanotube (CNT) and two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs). Unlike conventional lattice doping with impurity atoms, it is challenging to achieve doping in nanoscale materials due to the limited physical space. The electrostatic doping opens an effective pathway to tune the charge carriers in nanoscale materials without introducing impurity atoms, which can perturb the atomic arrangement and degrade the intrinsic electronic properties of the nanoscale materials.
